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| e PTB 20030 15 Watts, 420-470 MHz RF Power Transistor Description The 20030 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 420 to 470 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 15 Watts, 420-470 MHz Class AB Characteristics 50% Collector Efficiency at 15 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 200 30 LOT COD E VCC = 24 V ICQ = 200 mA f = 470 MHz Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 48 50 4.0 6.0 63 0.30 -40 to +150 2.8 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20030 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions Ib = 0 A, IC = 40 mA, RBE = 22 VBE = 0 V, IC = 40 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 0.4 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 55 3.5 20 Typ 65 70 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz) Intermodulation Distortion (VCC = 24 Vdc, Pout = 15 W(PEP), ICQ = 200 mA, f1 = 469 MHz, f2 = 470 MHz) Load Mismatch Tolerance (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA, f = 420 MHz--all phase angles at frequency of test) Symbol Gpe C IMD Min 11.0 50 -- Typ 13.0 -- -28 Max -- -- -- Units dB % dBc -- -- 10:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 24 Vdc, Pout = 15 W, ICQ = 200 mA) Z Source Z Load Frequency MHz 420 450 470 R 4.0 5.4 4.9 Z Source jX -2.2 -3.9 -5.7 R 7.2 6.8 6.6 Z Load jX -1.0 -3.0 -4.3 2 e Typical Performance Gain & Efficiency vs. Frequency 16 15 PTB 20030 (as measured in a broadband circuit) 80 70 Gain (dB) 14 13 Efficiency (%) Gain (dB) 60 50 12 11 10 410 VCC = 24 V ICQ = 50 mA Pout = 1.5 W 420 430 440 450 460 40 30 20 470 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20030 Uen Rev. D 09-28-98 3 Efficiency (%) |
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